?2008 fairchild semiconductor corporation FGA50N100BNTD 1000v, 50a npt-trench igbt co-pak rev. a1 FGA50N100BNTD 1000v, 50a npt-trench igbt co-pak tm FGA50N100BNTD 1000v, 50a npt-trench igbt co-pak general description trench insulated gate bipolar transistors (igbts) with npt technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. these dev ices are well suited for induction heating ( i-h ) applications features ? high speed switching ? low saturation voltage : v ce(sat) = 2.5 v @ i c = 60a ? high input impedance ? built-in fast recovery diode absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol description FGA50N100BNTD units v ces collector-emitter voltage 1000 v v ges gate-emitter voltage 25 v i c collector current @ t c = 25 c50 a collector current @ t c = 100 c35 a i cm (1) pulsed collector current 200 a i f diode continuous forward current @ t c = 100 c15 a p d m a x i m u m p o w e r d i s s i p a t i o n @ t c = 25 c 156 w maximum power dissipation @ t c = 100 c63 w t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction-to-case -- 0.8 c / w r jc (diode) thermal resistance, junction-to-case -- 2.4 c / w r ja thermal resistance, junction-to-ambient -- 25 c / w application micro- wave oven, i-h cooker, i-h ja r, induction heater, home appliance g c e g c e g c e to-3p november 2008
FGA50N100BNTD 1000v, 50a npt-trench igbt co-pak rev. a1 FGA50N100BNTD 1000v, 50a npt-trench igbt co-pak ?2008 fairchild semiconductor corporation package marking and ordering information electrical characteristics of igbt t c = 25 c unless otherwise noted electrical characteristics of diode t c = 25 c unless otherwise noted device marking device package packaging type qty per tube max qty per box FGA50N100BNTD FGA50N100BNTDtu to-3pn rail / tube 30ea - symbol parameter test conditions min. typ. max. units off characteristics bv ces collector emitter breakdown voltage v ge = 0v, i c = 1ma 1000 -- -- v i ces collector cut-off current v ce = 1000v, v ge = 0v -- -- 1.0 ma i ges g-e leakage current v ge = 25, v ce = 0v -- -- 500 na on characteristics v ge(th) g-e threshold voltage i c = 60ma, v ce = v ge 4.0 5.0 7.0 v v ce(sat) collector to emitter saturation voltage i c = 10a , v ge = 15v -- 1.5 1.8 v i c = 60a , v ge = 15v -- 2.5 2.9 v dynamic characteristics c ies input capacitance v ce =10v , v ge = 0v, f = 1mhz -- 6000 -- pf c oes output capacitance -- 260 -- pf c res reverse transfer capacitance -- 200 -- pf switching characteristics t d(on) turn-on delay time v cc = 600 v, i c = 60a, r g = 51 ? , v ge =15v, resistive load, t c = 25 c -- 140 -- ns t r rise time -- 320 -- ns t d(off) turn-off delay time -- 630 -- ns t f fall time -- 130 250 ns q g total gate charge v ce = 600 v, i c = 60a, v ge = 15v , , t c = 25 c -- 275 350 nc q ge gate-emitter charge -- 45 -- nc q gc gate-collector charge -- 95 -- nc symbol parameter test conditions min. typ. max. units v fm diode forward voltage i f = 15a -- 1.2 1.7 v i f = 60a -- 1.8 2.1 v t rr diode reverse recovery time i f = 60a di/dt = 20 a/us 1.2 1.5 us i r instantaneous reverse current v rrm = 1000v -- 0.05 2 ua
FGA50N100BNTD 1000v, 50a npt-trench igbt co-pak rev. a1 FGA50N100BNTD 1000v, 50a npt-trench igbt co-pak ?2008fairchild semiconductor corporation -50 0 50 100 150 1 2 3 i c =10a 30a 60a 80a common emitter v ge =15v collector-emitter voltage, v ce [v] case temperature, t c [ o c] 4 8 12 16 20 0 2 4 6 8 10 common emitter t c = - 40 o c i c =10a 80a 60a 30a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 2 4 6 8 10 common emitter t c = 25 o c 80a 60a 30a i c = 10a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 2 4 6 8 10 common emitter t c = 125 o c 80a 60a 30a i c = 10a collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 4. saturation voltage vs. v ge fig 3. saturation voltage vs. case temperature at varient current level fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge 012345 0 40 80 120 160 200 20v 15v 10v 9v 8v 7v collector current, i c [a] collector-emitter voltage, v ce [v] common emitter t c =25 o c v ge =6v 012345 0 40 80 120 160 200 collector current, i c [a] collector-emitter voltage, v ce [v] common emitter v ge =15v tc= 25 o c tc=125 o c
FGA50N100BNTD 1000v, 50a npt-trench igbt co-pak rev. a1 FGA50N100BNTD 1000v, 50a npt-trench igbt co-pak ?2008fairchild semiconductor corporation 0 5 10 15 20 25 30 100 1000 10000 common emitter v ge = 0v, f = 1mhz t c = 25 o c cres coes cies capacitance [pf] collector-emitter voltage, v ce [v] 0 50 100 150 200 10 100 1000 10000 v cc =600v, i c =60a v ge = +/-15v t c =25 o c tdoff tdon tr tf switching time [ns] gate resistance, r g [ ? ] 10 20 30 40 50 60 100 1000 v cc =600v, rg=51 ? v ge =+/-15v, t c =25 o c tdon tr tf tdoff switching time [ns] collector current, i c [a ] 0 50 100 150 200 250 300 0 5 10 15 20 common emitter v cc =600v, r l =10 ? t c =25 o c gate-emitter voltage,v ge [v] gate charge, q g [nc] fig 7. capacitance characteristics fig 8. switching characteristics vs. gate resistance fig 9. switching ch aracteristics vs. collector current fig 10. gate charge characteristics fig 11. soa characteristics fig 12. transient thermal impedance of igbt 1e-5 1e-4 1e-3 0.01 0.1 1 10 1e-3 0.01 0.1 1 rect angul ar pul se durati on [sec] thermal response [zthjc] 0.5 0.2 0.1 0.05 0.02 0.01 si ngle pul se 0.1 1 10 100 1000 0.01 0.1 1 10 100 50 s 100 s 1ms dc operation ic max (pulsed) ic max (continuous) single nonrepetitive pulse tc = 25 o c curves must be derated linearly with increase in temperature collector current, ic [a] collector - emitter voltage, v ce [v]
FGA50N100BNTD 1000v, 50a npt-trench igbt co-pak rev. a1 FGA50N100BNTD 1000v, 50a npt-trench igbt co-pak ?2008fairchild semiconductor corporation fig 17. junction capacitance 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 t c = 25 o c t c = 100 o c forward voltage, v fm [v] forward current, i f [a] 0 40 80 120 160 200 240 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i rr t rr i f = 60 a t c = 25 o c di/dt [a/us] reverse recovery time, t rr [us] 0 20 40 60 80 100 120 reverse recovery current i rr [a] 10 20 30 40 50 60 0.4 0.6 0.8 1.0 1.2 i rr t rr forward current, i f [a] reverse recovery time, t rr [us] 4 6 8 10 12 di/dt=-20a/us t c =25 o c reverse recovery current i rr [a] 0 300 600 900 1e-3 0.01 0.1 1 10 100 1000 t c = 150 o c t c = 25 o c reverse current, i r [ua] reverse voltage, v r [v] 0.1 1 10 100 0 50 100 150 200 250 t c = 25 o c capacitance, c j [pf] reverse voltage, v r [v] fig 14. reverse recovery characteristics vs. di/dt fig 13. forward characteristics fig 15. reverse recovery characteristics vs. forward current fig 16. reverse current vs. reverse voltage
?2008 fairchild semiconductor corporation FGA50N100BNTD 1000v, 50a npt-trench igbt co-pak rev. a1 FGA50N100BNTD 1000v, 50a npt-trench igbt co-pak dimensions in millimeters
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